A new memory chip writes data using less than 0.1 picojoules per bit, built on a standard 300-mm wafer line rather than exotic nanoscale materials. The trick: swapping magnetic spin for orbital angular momentum in a thicker, manufacturable metal layer, hitting 182% tunnel magnetoresistance and nanosecond switching.

— via arXiv — Physics, Dinggui Zeng, Yang Gao, Jinyu Duan, Lei Zhao, Yuhao An, Xing He, Jintao Ke, Yonglong Ga, Shasha Wang, Zhenghui Ji, Muyuan Chen, Hengan Zhou, Xuejie Xie, Enlong Liu, Junlu Gong, Qijun Guo, Yihui Sun, Zejie Zheng, Weiming He, Xiaolei Yang, Fantao Meng, Yaohua Wang, Hongxin Yang, Delin Zhang, Yong Jiang, Wanjun Jiang, Shikun He